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| ON Semiconductort PNP Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low frequency switching applications. 2N6052* 2N6058 2N6059* *ON Semiconductor Preferred Device NPN * High DC Current Gain -- * * hFE = 3500 (Typ) @ IC = 5.0 Adc Collector-Emitter Sustaining Voltage -- @ 100 mA VCEO(sus) = 80 Vdc (Min) -- 2N6058 100 Vdc (Min) -- 2N6052, 2N6059 Monolithic Construction with Built-In Base-Emitter Shunt Resistors PD, POWER DISSIPATION (WATTS) II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I III I I I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I I II II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base voltage 5.0 12 20 Collector Current -- Continuous Peak Base Current 0.2 Total Device Dissipation @TC = 25_C Derate above 25_C PD 150 Watts W/_C _C 0.857 Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200_C DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 150 WATTS CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol RJC Rating 1.17 Unit Thermal Resistance, Junction to Case _C/W (1) Indicates JEDEC Registered Data. 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 2 Publication Order Number: 2N6052/D 2N6052 t, TIME ( s) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (2) (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) VCEO(sus) Vdc 2N6058 2N6052, 2N6059 80 100 -- -- -- -- -- -- ICEO mAdc 2N6058 2N6052, 2N6059 1.0 1.0 0.5 5.0 2.0 Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEX mAdc IEBO mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 6.0 Adc, VCE = 3.0 Vdc) (IC = 12 Adc, VCE = 3.0 Vdc) hFE -- 750 100 -- -- -- -- 18,000 -- 2.0 3.0 4.0 2.8 Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 24 mAdc) (IC = 12 Adc, IB = 120 mAdc) Base-Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc) Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc) VCE(sat) Vdc VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |hfe| 4.0 -- MHz 2N6052 2N6058/2N6059 Cob hfe -- -- 500 300 -- pF -- Small-Signal Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) 300 *Indicates JEDEC Registered Data. (2) Pulse test: Pulse Width = 300 s, Duty Cycle = 2.0%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA V2 approx +8.0 V 0 V1 approx -8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 +4.0 V 25 s for td and tr, D1 is disconnected and V2 = 0 VCC -30 V RC SCOPE 10 5.0 ts 2.0 1.0 0.5 0.2 0.1 0.2 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) tr td @ VBE(off) = 0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20 tf 2N6052 2N6059 TUT 5.0 k 50 For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit Figure 3. Switching Times http://onsemi.com 2 2N6052 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) RJC(t) = r(t) RJC RJC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 0.03 0.05 0.1 Figure 4. Thermal Response ACTIVE-REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 10 TJ = 200C SECOND BREAKDOWN LIM ITED BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25C (SINGLE PULSE) 0.1 ms IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 100 0.05 10 TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25C (SINGLE PULSE) 0.1 ms 0.5 ms 1.0 ms 5.0 ms 0.5 ms 1.0 ms 5.0 ms d c d c 50 70 100 50 70 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 30 Figure 5. 2N6058 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. 2N6052, 2N6059 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5, 6, and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3 2N6052 3000 2000 1000 500 200 100 50 30 1.0 2.0 5.0 2N6052 2N6058/2N6059 500 TC = 25C VCE = 3.0 V IC = 5.0 A TJ = 25C 300 C, CAPACITANCE (pF) 200 Cib Cob 100 70 50 0.1 0.2 2N6052 2N6058/2N6059 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 hfe, SMALL-SIGNAL CURRENT GAIN 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 Figure 7. Small-Signal Current Gain Figure 8. Capacitance http://onsemi.com 4 2N6052 PNP 2N6052 20,000 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.2 0.3 25C -55C VCE = 3.0 V TJ = 150C 40,000 20,000 hFE , DC CURRENT GAIN 10,000 6,000 4,000 2,000 1,000 600 400 0.2 0.3 -55C 25C TJ = 150C NPN 2N6058, 2N6059 VCE = 3.0 V 0.5 5.0 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 2.6 3.0 2.6 2.2 1.8 1.4 1.0 0.5 TJ = 25C IC = 3.0 A 6.0 A 9.0 A 12 A IC = 3.0 A 2.2 1.8 1.4 1.0 0.5 6.0 A 9.0 A 12 A 1.0 5.0 2.0 3.0 10 IB, BASE CURRENT (mA) 20 30 50 1.0 2.0 3.0 5.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 10. Collector Saturation Region 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.5 1.0 0.5 0.2 0.3 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) 3.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0.2 0.3 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 11. "On" Voltages http://onsemi.com 5 2N6052 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 2N6052 Notes http://onsemi.com 7 2N6052 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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